Doped Diamond SemiConductor and Method of Manufacture

ABSTRACT

A doped diamond semiconductor and method of production using a laser is disclosed herein. As disclosed, a dopant and/or a diamond or sapphire seed material may be added to a graphite based ablative layer positioned below a confinement layer, the ablative layer also being graphite based and positioned above a backing layer, to promote formation of diamond particles having desirable semiconductor properties via the action of a laser beam upon the ablative layer. Dopants may be incorporated into the process to activate the reaction sought to produce a material useful in production of a doped semiconductor or a doped conductor suitable for the purpose of modulating the electrical, thermal or quantum properties of the material produced. As disclosed, the diamond particles formed by either the machine or method of confined pulsed laser deposition disclosed may be arranged as semiconductors, electrical components, thermal components, quantum components and/or integrated circuits.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation-in-part of and claims benefit ofpending utility non-provisional patent application Ser. No. 15/836,570filed on Dec. 8, 2017 which is a continuation-in-part of and claimsbenefit of pending utility non-provisional Pat. App. No. 15/627,426filed on Jun. 19, 2017 which claimed priority and benefit from U.S.Utility Provisional Patent Application No. 62/351,403 filed Jun. 17,2016, all of which are incorporated by reference herein in theirentireties.

STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT

No federal funds were used to create or develop the invention herein.

REFERENCE TO SEQUENCE LISTING, A TABLE, OR A COMPUTER PROGRAM LISTINGCOMPACT DISK APPENDIX

N/A

BACKGROUND OF THE INVENTION Field of the Invention

A wide variety of semiconductor devices are used as basic electronicbuilding blocks to form electronic devices from computers to cellulartelephones, home entertainment systems, and automobile control systems.Other devices use semiconductors for purposes not related to computingor processing power, such as audio amplifiers, industrial controlsystems, and for other such purposes.

Modern semiconductors are typically based on silicon, with dopants addedto change their electrical properties. For example, doping silicon withphosphorous creates a surplus of electrons resulting in n-typesemiconductor material due to the fifth valence electron not present insilicon, which has only four valence electrons. Similarly, dopingsilicon with boron creates p-type silicon having a surplus of “holes”,or an absence of electrons, because boron has only three valenceelectrons which is one fewer than silicon.

When n-type and p-type silicon are in contact with one another,electricity flows in one direction across the junction more easily thanin the other direction. More complex configurations of n-type and p-typematerial can be assembled to form various types of transistors,integrated circuits, and other electronic devices.

But, the performance of certain semiconductor devices is limited by theproperties inherent in the semiconductor materials used. For example, aprocessor's speed is limited by the amount of power that can bedissipated in the transistors and other devices that make up theprocessor integrated circuit, which can literally melt if operated toofast. Reduction in size is also limited, because as more transistorsdissipating a certain amount of power are packed into a smaller area,the amount of heat dissipated in a certain area increases. Even simpledevices such as diodes used in high-frequency, high-power applicationssuffer from power limitations, since the physical size of an individualtransistor or diode is typically very small. Semiconductor devicesenabling greater power dissipation and higher semiconductor devicedensities are desirable to provide higher performance, smallerelectrical devices. As disclosed, doped diamond semiconductors provide atype of a semiconductor which may enable greater power dissipation andhigher semiconductor device densities. Further, fabrication of dopeddiamond semiconductors and integrated circuits based on those dopeddiamond semiconductors using the methods disclosed herein including vialaser ablation, maybe produced at extremely low cost promotingwidespread adoption and replacement of traditional silicon basedsemi-conductors. In other embodiments, the graphite material may bedoped prior to laser ablation to manipulate either the thermalproperties or the quantum state properties, or both, wherein the laserablated doped graphite material is an improved thermal conductor orenables the quantum state characteristics of the diamond structureproduced.

Prior Art

The present disclosure for production of doped diamond semiconductors isgenerally meant to fully enable one of ordinary skill in the art and isnot meant to limit the breadth of the invention or the scope of theclaims to any one particular doped diamond semiconductor as the presentdisclosure may be used for production of any doped diamond semiconductoruseful in production of integrated circuits as commonly found inelectronic devices. The following US patents provide an additionaldiscussion and disclosure on doped diamond semiconductors and areincorporated by reference herein in their entirety:

-   -   1. U.S. Pat. No. 8,933,462 titled Method of Fabricating Diamond        Semiconductor and Diamond Semiconductor formed according to the        Method;    -   2. U.S. Pat. No. 8,735,907 titled Ohmic Electrode for Use in        Semiconductor Diamond Device;    -   3. U.S. Pat. No. 8,237,170 titled “Schottky Diamond        Semiconductor Device and Manufacturing Method for A Schottky        Electrode for Diamond Semiconductor Device”;    -   4. U.S. Pat. No. 8,158,455 titled “Boron-doped diamond        semiconductor”;    -   5. U.S. Pat. No. 5,254,237 titled “Plasma Arc Apparatus for        Producing Diamond Semiconductor Devices”;    -   6. U.S. Pat. No. 5,254,237 titled “Plasma arc apparatus for        producing diamond semiconductor devices”; the preceding        references are included herein for purposes of enablement and        may be claimed in whole or in part, for their teachings in the        implementation of the present disclosure, and are fully        incorporated by reference herein. Applicant's inclusion of        multiple references herein is not an admission that any        particular reference or references, alone or in combination, is        necessarily relevant or anticipates or makes obvious the present        disclosure.

SUMMARY OF DISCLOSURE

Fabrication of doped diamond semiconductors and conductors using lasersis disclosed and particularly using a laser to ablate a quantity ofcarbon based starter material, and with or without metals proximate thecarbon based starter material, and with or without various dopingmaterials (dopants) and/or seeding materials (diamonds or sapphires)positioned between an upper transparent confinement layer and a lowerbacking plane, the carbon based starter material arranged therein toform a diamond based semiconductor or conductor useful for production ofelectrical components, integrated circuits, thermal conductors ormaterials having quantum state characteristics useful for computerapplications on application of the laser to the carbon based startermaterial. As disclosed, the laser-based method of production of a dopeddiamond semiconductor allows for fine control of crystallization growth.For the purposes of this disclosure, dopants (doping materials) areadded for a similar purpose as they would be for carriergeneration/creation in a silicon based semiconductor, as dopingintentionally introduces impurities into an for the purpose ofmodulating its electrical properties. The impurities are dependent uponthe type of semiconductor and the properties that it needs to have forits intended purpose. Lightly and moderately doped semiconductors arereferred to as extrinsic semiconductors. A semiconductor doped to suchhigh levels that it acts more like a conductor than a semiconductor isreferred to as a degenerate semiconductor. As disclosed herein, possibledoping materials (dopant) may include, without restriction or limitationthe following: boron, aluminum, nitrogen, gallium, indium, phosphorus,phosphine gas, arsenic, antimony, bismuth, lithium, germanium, silicon,xenon, gold, platinum, gallium arsenide, tellurium, sulphur, tin, zinc,chromium, gallium phosphide, magnesium, cadmium telluride, chlorine,sodium, cadmium sulfide, iodine, fluorine, each acting alone or incombination with any of the preceding elements, in any formulation, toactivate the reaction sought to produce a material useful in productionof a semiconductor or conductor suitable for the purpose of modulatingthe electrical, thermal or quantum state properties of the material orcomponent produced. Nitrogen may have particular value for quantumcomputing applications and substrates. One of ordinary skill willappreciate that when using dopants with this process, to manipulatethermal properties or quantum state properties, wherein nitrogen wouldbe the dopant, the resulting diamond material is not by definition adiamond semiconductor, but instead either a thermal conductor orsubstrate useful for quantum computing, as will be discussed furtherherein. U.S. Pat. Nos. 8,939,107 and 8,499,599 are incorporated byreference herein as related to use and methods of using lasers forconversion of carbon particles to diamond particles. The preceding USPatents are included herein for purposes of enablement and may beclaimed in whole or in part, for their teachings in the implementationof the present disclosure, and are fully incorporated by referenceherein. Applicant's inclusion of multiple references herein is not anadmission that any particular reference or references, alone or incombination, is necessarily relevant or anticipates or makes obvious thepresent disclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated in and constitute apart of this specification, illustrate embodiments and together with thedescription, serve to explain and illustrate the principles of theDiamond Doped Semiconductor and Method of Production (hereinafterreferred to simply as the “Diamond Doped Semiconductor Method”) asdisclosed herein.

FIG.1 is a schematic diagram of an exemplary confined pulse laserdeposition setup as taught in U.S. Pat. No. 8,939,107, incorporated byreference herein.

FIG. 2 is a schematic diagram of a forming process for diamond phasecarbon using a laser with doping materials added to the graphiteparticles.

FIG. 3 is a schematic diagram of a forming process for diamond phasecarbon using a laser with doping materials added to the graphiteparticles wherein multiple crystallized particles are formed into 2Dand/or 3D lattice or matrix like structures as the output from theprocess.

FIG. 4 is a schematic diagram of a forming process for diamond phasecarbon using a laser with doping materials and diamond seed materialadded to the graphite particles wherein multiple crystallized particlesare formed into 2D and/or 3D lattice or matrix like structures as theoutput from the process.

FIG. 5 is a schematic diagram of a forming process for diamond phasecarbon using a laser with doping materials and diamond seed materialadded to the graphite particles.

FIG. 6 is a schematic diagram of a forming process for diamond phasecarbon using a laser with doping materials and diamond and othermaterials used for seed material are added to the graphite particles andwherein multiple crystallized particles are formed into 2D and/or 3Dlattice or matrix like structures as the output from the process.

FIG. 7 provides a top view of an illustrative embodiment of anelectrical component commonly known as a CMOS circuit that may beproduced via the present disclosure.

DETAILED DESCRIPTION Listing of Elements

Element Description Element Number  1  2  4  5  6  7 Assembly  8  9 11Ablative layer 12 13 Confinement layer 14 15 16 17 18 19 Laser beam 2021 Mask 22 23 Focus lens 24 25 Target area 26 27 XYZ stage 28 Graphite29 Dopants 30 Diamond seed materials 31 Sapphire seed materials 32 Metal33 Insulator 34 Doped diamond Semiconductor 35 N (negative)  35aN(positive)  35b P(positive)  35c P(negative)  35d 36 Conductor 37Integrated circuit 38 Resistor 39 Electrical component 40 Thermalcomponent 50 Quantum computing component 60 Doped Diamond Semiconductorand 100  Method of Manufacturer

DETAILED DESCRIPTION

Before the present Doped Diamond Semiconductor and Method of Manufacture100 is disclosed and described, it is to be understood that the DopedDiamond Semiconductor and Method of Manufacture 100 is not limited tospecific methods, specific components, or to particular implementations.It is also to be understood that the terminology used herein is for thepurpose of describing particular embodiments only and is not intended tobe limiting.

As used in the specification and the appended claims, the singular forms“a,” “an,” and “the” include plural referents unless the context clearlydictates otherwise. Ranges may be expressed herein as from “about” oneparticular value, and/or to “about” another particular value. When sucha range is expressed, another embodiment includes from the oneparticular value and/or to the other particular value. Similarly, whenvalues are expressed as approximations, by use of the antecedent“about,” it will be understood that the particular value forms anotherembodiment. It will be further understood that the endpoints of each ofthe ranges are significant both in relation to the other endpoint, andindependently of the other endpoint.

“Optional” or “optionally” means that the subsequently described eventor circumstance may or may not occur, and that the description includesinstances where said event or circumstance occurs and instances where itdoes not.

Throughout the description and claims of this specification, the word“comprise” and variations of the word, such as “comprising” and“comprises,” means “including but not limited to,” and is not intendedto exclude, for example, other components, integers or steps.“Exemplary” means “an example of” and is not intended to convey anindication of a preferred or ideal embodiment. “Such as” is not used ina restrictive sense, but for explanatory purposes. Disclosed arecomponents and methods that can be used with at least one embodiment ofthe disclosed Doped Diamond Semiconductor and Method for Manufacture100. These and other components are disclosed herein, and it isunderstood that when combinations, subsets, interactions, groups, etc.of these components are disclosed that while specific reference of eachvarious individual and collective combinations and permutation of thesemay not be explicitly disclosed, each is specifically contemplated anddescribed herein, for all potential embodiments of the Doped DiamondSemiconductor and Method for Manufacture 100. This applies to allaspects of this application including, but not limited to, components ofa Doped Diamond Semiconductor and Method for Manufacture 100. Thus, ifthere are a variety of additional components that can be added it isunderstood that each of these additional components can be added withany specific embodiment or combination of embodiments of the DopedDiamond Semiconductor and Method for Manufacture 100. The present DopedDiamond Semiconductor and Method of Manufacture 100 may be understoodmore readily by reference to the following detailed description of theembodiments and the examples included therein and to the Figures andtheir previous and following description.

The concept of confined pulse laser deposition is illustrated in FIG. 1from U.S. Pat. No. 8,939,107 incorporated by reference herein. A frame(not shown) is fixed to a sample assembly 8 that includes a backingplate 10, an ablative layer 12 and a transparent confinement layer 14.The frame clamps the backing plate 10 to the confinement layer 14 withthe ablative layer sandwiched between the backing plate 10 and theconfinement layer 14. The ablative layer 12 can be graphite 29, metal 33or other thin film coating that can absorb laser energy. The confinementlayer 14 can be made of various materials transparent to the laser, forexample glass or sapphire. As used in the processes described at FIGS.2-6, the transparent confinement layer 14 can be made of variousmaterials transparent to the laser, including a layer of graphiteparticles of sufficient size and/or depth to act as a sufficientconfinement layer to support production of diamond semiconductormaterial after confined pulsed laser deposition. As used herein, thegraphite particles may range in size from “nano” to “micro” to “macro”as the sizing of the graphite particles is known to one of ordinaryskill. Further, it will be appreciated that the particular applicationwill determine the size of graphite particles most suitable. Theablative layer 12 will be transformed to a metaphase after confinedpulsed laser deposition. The frame can include screws or other fasteningmechanism to provide close contact between the confinement layer 14 andthe backing plate 10. A frame may not be needed or required for theprocesses of FIGS. 2-6. The space between the confinement layer 14 andthe ablative layer 12 can preferably be adjusted by the fasteningmechanism and/or by inserting a separator, for example aluminum foil.The sample assembly 8 can be placed on an XYZ-stage 28 that can positionthe sample assembly 8 in a desired location.

The mechanism for generating pressure is similar to that of laser shockpeening, which is a well-known technique for high pressure processing ofmetallic components. In operation, a laser beam 20 is directed to passthrough a focus lens 24 that controls the final spot size of the laserbeam 20. Optionally, a beam diffuser, shaper, or mask 22 can be placedin the optical path of the laser beam 20 to make the intensitydistribution of the laser beam 20 more uniform. When the laser beam 20transmits through the transparent confinement layer 14 and irradiatesthe target 26 of the ablative layer 12, the ablative layer 12 vaporizesand ionizes into hot plasma. The ionized plasma gas is confined by theconfinement layer 14 and generates a strong shock wave, which provides asufficient local pressure to synthesize metaphase from the ablativelayer 12. For example, when the ablative layer 12 is a graphite coating29, sufficient local pressure is generated to synthesize diamond phasecarbon from the graphite coating. One of ordinary skill will appreciatethat “coating” is not meant to imply a size and subject to theparticular application, the graphite coating may be very thin (0.01 cmor very thick and substantial i.e. 2.0 cm) subject to the particularapplication to and as suitable for a particular application withoutlimitation or restriction. In other embodiments, the confinement layer14 may be graphite particles with the ablative layer sandwiched betweenthe backing plate 10 and the confinement layer 14. The ablative layer 12can also be a mixture including graphite 29 and dopants 30, diamondseeding material 31, sapphire seeding material 32, metal 33, or otherthin film coating materials, alone or in combination, that can absorblaser energy. Metals that may be used in this process may include butare limited to copper, zinc, steel, nickel, gold, silver, platinum,titanium, titanium nitride, and tungsten, and combinations therein.

Confined pulse laser deposition can have several advantages over othersynthesizing techniques. For example, the laser source 20 can be highlycontrollable and reproducible, and operating conditions can be easilychanged. The laser-induced pressure in the confined configuration isfour to ten times greater than the pressure in conventional pulse laserdeposition. The focus lens 24 and the XYZ-stage 28 allow careful controlover the target area 26 of the ablative layer 12 to be irradiated by thelaser beam 20. This technique can be used in combination with othertechniques, such as by adding another laser for heating, inserting amask into the laser beam for patterning, or utilizing alternativeatmosphere environments for protection. (not shown)

As defined herein, a mask 22 may be a mask set or a photomask set whichis a series of electronic data that define geometry for the steps ofsemiconductor fabrication as commonly understood and further asdisclosed herein. Each of the physical masks generated from this data istypically called a photomask. As is known to one of ordinary skill inthe art, a mask set for a modern process contain many masks, up totwenty or more masks, each of which defines a specific step in thesemiconductor fabrication process. Examples of masks include: p-well,n-well, active, poly, p-select, n-select, contact metal, 1, 2, 3. Thepresently disclosed method and process may incorporate masks asunderstood in the prior art for use in the present disclosure, withoutrestriction or limitation.

The physical processes of confined pulse laser deposition can bedescribed in three stages. In the first stage, the target is ablated bypulsed laser radiation; the graphite coating vaporizes immediately andcreates a dense plasma plume which continues absorbing the laser energy.The heating and condensing of the plasma plume results in the formationof a variety of carbon species including clusters, single atoms, orions. Kinetic energies of these carbon species are much higher thanthermal. As the plasma pressure goes to its peak, the carbon species mayaggregate and form carbon clusters by collision or diffusion. In thesecond stage, the plasma experiences an adiabatic cooling and maintainsthe applied pressure after the switch-off of the laser. The third stageis the adiabatic cooling of the recombined plasma until it completelycools down.

The apparatus may also include a laser beam 20 that irradiates andablates the ablative coating through the transparent confinement layer,and induces a high-pressure between the confinement layer and thebacking plane to synthesize a metaphase from the ablative layer. Theconfinement layer and the backing plane confine the ablative coating tocause the high-pressure between the confinement layer and the backingplane. The laser beam 20 is used at generally ambient room temperatureand pressure. The confinement layer may be comprised of the samematerial as the ablative layer, where the difference between theconfinement layer and the ablative layer is defined by function and notmaterial composition. The upper layer can provide the confinement as thelight that passes through the upper layer and ablates a lower layer,perhaps due to a beam focused below the surface.

In another embodiment the ablative coating can be a graphite coatingthat transforms into diamond phase carbon. The ablative coating can alsobe a metal or a thin film coating. The ablative coating may containdopants 30 and/or diamond seed materials 31. The apparatus can alsoinclude a focus lens, wherein the laser beam is directed through thefocus lens to control the final spot size of the laser beam on theablative coating. The apparatus can also include a beam diffuser orshaper, where the laser beam is directed through the beam diffuser tomake the laser beam intensity more uniform. The apparatus can alsoinclude an XYZ-stage to position a desired target area 26 of theablative coating to be irradiated by the laser beam. As illustrated bythe reference to U.S. Pat. No. 8,939,107, incorporated by referenceherein, the laser beam can have an intensity of less than about 6GW/cm², or less than about 4 GW/cm². The laser beam can have anexcitation wavelength of about 568 nm. One of ordinary skill willappreciate that in no way is the laser intensity limited to the rangesprovided herein and may be less than 4 GW/cm². or more than 6 GW/cm²,without limitation or restriction, as sufficient for the properties ofthe diamond phase carbon sought. Furthermore, use of a laser beam havingan excitation wavelength of about 568 nm is for illustrative purposesonly and other excitation wavelengths greater than 568 nm and/or lessthan 568 nm are contemplated and may be used without restriction orlimitation as sufficient for the properties of the diamond phase carbonsought. In one embodiment excitation wavelengths of 1064 nm were usedwith success. Generally, any wavelength of light may be used includingultraviolet, infra-red and visible light. The laser pulse may be variedby width, the number of pulses, and energy per pulse incident upon theablative layer, as is suitable to the particular application withoutlimitation or restriction.

FIG. 2 provides a schematic diagram of a forming process for diamondphase carbon using a laser with doping materials added to the graphiteparticles. As previously disclosed, possible doping materials (dopants)30 may include, without restriction or limitation the following: boron,aluminium, nitrogen, gallium, indium, phosphorus, phosphine gas,arsenic, antimony, bismuth, lithium, germanium, silicon, xenon, gold,platinum, gallium arsenide, tellurium, sulphur, tin, zinc, chromium,gallium phosphide, magnesium, cadmium telluride, chlorine, sodium,cadmium sulfide, iodine, fluorine, each acting alone or in combinationwith any of the preceding elements, in any formulation, to activate thereaction sought to produce a material useful in production of asemiconductor or conductor suitable for the purpose of modulating theelectrical, thermal or quantum properties of the material produced. Oneof ordinary skill will appreciate that when using dopants with thisprocess, to manipulate thermal properties or quantum state properties,the resulting diamond material is not by definition a diamondsemiconductor, as will be discussed further herein. As used for aquantum computing application and substrate, the resulting doped diamondmaterial is an N-V center for a quantum computer. Nitrogen (N) would bethe dopant. There would be secondary operations to achieve the vacancy(V). Doping the carbon graphene to manipulate thermal properties is alsonot a semiconductor and is isotopically pure c12 or c13 diamonds.

FIG. 3 is a schematic diagram of a forming process for diamond phasecarbon using a laser with doping materials added to the graphitenanoparticles wherein multiple crystallized particles are formed into 2Dand/or 3D lattice or matrix like structures as the output from theprocess.

FIG. 4 is a schematic diagram of a forming process for diamond phasecarbon using a laser with doping materials and diamond seed materialadded to the graphite particles wherein multiple crystallized particlesare formed into 2D and/or 3D lattice or matrix like structures as theoutput from the process.

FIG. 5 is a schematic diagram of a forming process for diamond phasecarbon using a laser with doping materials and diamond seed materialadded to the graphite particles.

FIG. 6 is a schematic diagram of a forming process for diamond phasecarbon using a laser with doping materials and diamond and othermaterials used for seed material are added to the graphite nanoparticlesand wherein multiple crystallized particles are formed into 2D and/or 3Dlattice or matrix like structures as the output from the process.

The apparatus for performing confined pulsed laser deposition atgenerally ambient room temperature and pressure as suggested by FIGS.2-6 may also include an apparatus having a backing plane 10, an ablativecoating 12 placed on the backing plane and a transparent confinementlayer 14 positioned on the backing plane 10, wherein the ablativecoating 12 is sandwiched between the backing plane 10 and thetransparent confinement layer 14. The transparent confinement layer 14may also be loose graphite particles which are transparent to the laserbeam 20 used in the process. Doping materials (dopant) 30 may be addedto the ablative layer 12 which may also be loose graphite particles,similar to those in the transparent confinement layer 14. Further,doping materials (dopants) 30 may be added to the material forming theablative layer 12, prior to the laser beam 20 acting therein, to promoteformation of diamond particles having desirable semiconductor propertiesvia the action of the laser beam 20 focused on target area 26 within theablative layer 12. Further, as shown in FIGS. 2-6, diamond seed material32 may be added to the material forming the ablative layer 12, prior tothe laser beam 20 acting therein, to promote formation of diamondparticles having desirable semiconductor properties via the action ofthe laser beam 20 upon the ablative coating 12.

FIG. 7 is an illustrative top view of an electrical component 40 thatmay be produced via the current process. As shown, one electricalcomponent 40 that could be produced with the present method, withoutlimitation or restriction, would be a CMOS invertor. As shown, theinsulator 34, the doped diamond semiconductor 35 and the conductor 37are electrically connected, lie in a single plane and are integrallyformed for transmission of an electrical signal across the electricalcomponent. As shown, the insulator 34 is primarily diamond but may bemade with other components including silicon oxide (SiO2), particularlyfor the insulators located in the upper portion of the electricalcomponent 40, without departure from the present process. As shown, thestructure of the doped diamond semiconductor 35 has been arranged viathe process to behave as required by the CMOS invertor design includingpositions for N (negative) 35 a, an N(positive) 35 b, a P(positive) 35c, and a P(negative) 35 d. Further, various conductors 37, typicallycomposed of metal are positioned within the electrical component 40 andproximate to or adjacent any of the first portion primarily defined asan insulator 34, the second portion formed from and composed of a dopeddiamond semiconductor 35, wherein the first portion and the secondportion are electrically connected, lie in a single plane and areintegrally formed for transmission of electricity across the electricalcomponent 40. One of ordinary skill will appreciate that integralformation using the process described herein of the first portion andthe second portion in a single plane allows for the first portion andsecond portion to be proximate and adjacent without being applied aslayers.

Although not shown, one of ordinary skill will appreciate that anynumber and combination of electrical components 40 may be produced usingthis process including subcomponents including a resistor, a transistor,a capacitor, an inverter (shown), an inductor or a diode and or acombination therein to produce an integrated electrical component havingthe various subcomponents electrically connected and positioned in asingle plane for transmission of electricity across the electricalcomponent 40. Together, the combination of electrical components may beformed together as an integrated circuit 38 (not shown). Although notshown, a resistor may be produced by at least a first portion formedfrom and composed of diamond, the first portion primarily defined as aninsulator 34 and at least a second portion formed from and composed of adoped diamond semiconductor 35, the second portion primarily defined andconfigured to be a conductor 37 and wherein the first portion and thesecond portion are electrically connected, lie in a single plane and areintegrally formed for transmission of electricity across the electricalcomponent 40.

Another electrical component 40 (not shown) may be formed by at least afirst portion formed from and composed of diamond, the first portionprimarily defined as an insulator 34 and then at least a second portionformed from and composed of graphite 29, the second portion primarilydefined as a conductor 37 with at least a third portion formed from andcomposed of a doped diamond semiconductor 35, the third portionprimarily defined as a semiconductor, wherein the first portion, thesecond portion and the third portion are integrally formed and worktogether for transmission of an electrical signal across the electricalcomponent 40. In another embodiment of an electrical component, a metalcould be present in the second portion and act primarily as a conductor37.

One of ordinary skill will appreciate that the present process allowsfor the creation of electrical components, an integrated circuit ormicrochip by allowing the graphene to act as the conductor, the diamondto act as the insulator and the doped diamond to act as thesemiconductor. The ability to control these elements with the precisionof the laser spot size enables precise control of the features. Dopingfor quantum computer preparation can be done using nitrogen as thedopant material, without exclusion or limitation as to other materialsuseful as dopants, for N-V center type manipulation useful for a quantumcomputer application, wherein Nitrogen (N) may be the dopant with othersecondary operations to achieve the vacancy (V).

Having described the preferred embodiments, other features of the DopedDiamond Semiconductor and Method of Manufacture will undoubtedly occurto those versed in the art, as will numerous modifications andalterations in the embodiments as illustrated herein, all of which maybe achieved without departing from the spirit and scope of the DopedDiamond Semiconductor and Method of Manufacture disclosed herein.Accordingly, the methods and embodiments pictured and described hereinare for illustrative purposes only, and the scope of the presentdisclosure extends to all method and/or structures for providingincreased functionality and longevity in the use and production of DopedDiamond Semiconductor and Method of Manufacture therein. Furthermore,the methods and embodiments pictured and described herein are in no waylimiting to the scope of the Doped Diamond Semiconductor and Method ofManufacture of use unless so stated in the following claims.

It should be noted that the Doped Diamond Semiconductor and Method ofManufacture is not limited to the specific embodiments pictured anddescribed herein, but is intended to apply to all similar apparatusesand methods for providing the various benefits and/or features of aDoped Diamond Semiconductor and Method of Manufacture. Modifications andalterations from the described embodiments will occur to those skilledin the art without departure from the spirit and scope of the DopedDiamond Semiconductor and Method of Manufacture. It is understood thatthe Doped Diamond Semiconductor and Method of Manufacture as disclosedherein extends to all alternative combinations of one or more of theindividual features mentioned, evident from the text and/or drawings,and/or inherently disclosed. All of these different combinationsconstitute various alternative aspects of the Doped DiamondSemiconductor and Method of Manufacture and/or components thereof. Theembodiments described herein explain the best modes known for practicingthe Doped Diamond Semiconductor & Method and/or components thereof andwill enable others skilled in the art to utilize the same. The claimsare to be construed to include alternative embodiments to the extentpermitted by the prior art.

While the Doped Diamond Semiconductor and Method of Manufacture has beendescribed in connection with preferred embodiments and specificexamples, it is not intended that the scope be limited to the particularembodiments set forth, as the embodiments herein are intended in allrespects to be illustrative rather than restrictive.

Unless otherwise expressly stated, it is in no way intended that anymethod set forth herein be construed as requiring that its steps beperformed in a specific order. Accordingly, where a method claim doesnot actually recite an order to be followed by its steps or it is nototherwise specifically stated in the claims or descriptions that thesteps are to be limited to a specific order, it is no way intended thatan order be inferred, in any respect. This holds for any possiblenon-express basis for interpretation, including but not limited to:Matters of logic with respect to arrangement of steps or operationalflow; plain meaning derived from grammatical organization orpunctuation; the number or type of embodiments described in thespecification.

It will be apparent to those skilled in the art that variousmodifications and variations can be made without departing from thescope or spirit. Other embodiments will be apparent to those skilled inthe art from consideration of the specification and practice disclosedherein. It is intended that the specification and examples be consideredas illustrative only, with a true scope and spirit being indicated bythe following claims.

What is claimed is:
 1. A confined pulsed laser deposition method forproduction of an electrical component comprising: a) placing an ablativecoating between a transparent confinement layer and a backing plane,wherein the ablative coating is composed of graphite particles and adopant material; b) directing a laser beam through the transparentconfinement layer to irradiate and ablate the ablative coating atgenerally ambient temperature and pressure; c) vaporizing the ablativecoating into an oxidized plasma gas using the laser beam; d) confiningthe vaporized ablative coating using the confinement layer to generatelaser induced pressure between the confinement layer and the backingplane; and, e) synthesizing a metaphase from the ablative coating usingthe laser induced pressure between the confinement layer and the backingplane forming an electrical component therein, the electrical componentfurther comprising: i. at least a first portion formed from and composedof diamond, the first portion primarily defined as an insulator; ii. atleast a second portion formed from and composed of graphite, the secondportion primarily defined as a conductor; iii. at least a third portionformed from and composed of a doped diamond, the third portion primarilydefined as a semiconductor; iv. wherein the first portion, the secondportion and the third portion are electrically connected, lie in asingle plane and integrally formed for transmission of an electricalsignal across the electrical component.
 2. The confined pulsed laserdeposition method for production of an electrical component according to1 wherein a metallic compound is present in the second portion.
 3. Theconfined pulsed laser deposition method for production of an electricalcomponent according to claim 1 formed as a resistor, a transistor,capacitor, inverter, an inductor or a diode or combination therein. 4.The confined pulsed laser deposition method for production of anelectrical component according to claim 2 formed as a resistor, atransistor, capacitor, inverter, an inductor or a diode or combinationtherein.
 5. The confined pulsed laser deposition method for productionof an electrical component according to claim 1 formed as a resistor, atransistor, capacitor, inverter, an inductor or a diode or combinationtherein and a plurality of the electrical components are furtherassembled to form an integrated circuit.
 6. The confined pulsed laserdeposition method for production of an electrical component according toclaim 1, wherein the ablative coating includes metal.
 7. The confinedpulsed laser deposition method for production of an electrical componentaccording to claim 1, wherein the dopant material is selected from theselected from the group comprising: boron, aluminium, nitrogen, gallium,indium, phosphorus, phosphine gas, arsenic, antimony, bismuth, lithium,germanium, silicon, xenon, gold, platinum, gallium arsenide, tellurium,sulphur, tin, zinc, chromium, gallium phosphide, magnesium, cadmiumtelluride, chlorine, sodium, cadmium sulfide, iodine, fluorine, eachacting alone or in combination with any of the preceding elements, inany formulation, to activate the reaction sought to produce a materialuseful in production of a doped semiconductor or a doped conductorsuitable for the purpose of modulating the electrical, thermal orquantum properties of the material produced.
 8. An electrical componentcomprising: a) at least a first portion formed from and composed ofdiamond, the first portion primarily defined as an insulator; b) atleast a second portion formed from and composed of graphite, the secondportion primarily defined as a conductor; c) at least a third portionformed from and composed of a doped diamond, the third portion primarilydefined as a semiconductor; d) wherein the first portion, the secondportion and the third portion are electrically connected, lie in asingle plane and integrally formed for transmission of an electricalsignal across the electrical component.
 9. The electrical componentaccording to claim 8 wherein the first portion, the second portion andthe third portion are non-layered.
 10. The electrical componentaccording to claim 8 wherein the first portion, the second portion andthe third portion are adjacent each other in the single plane.
 11. Theelectrical component according to claim 8 wherein the first portion, thesecond portion and the third portion may be adjacent each other in thesingle plane.
 12. The electrical component according to claim 8 whereina metallic compound is present in the second portion.
 13. The electricalcomponent according to claim 8 formed as a resistor, a transistor,capacitor, inverter, an inductor or a diode or combination therein. 14.The electrical component according to claim 9 formed as a resistor, atransistor, capacitor, inverter, an inductor or a diode or combinationtherein.
 15. The electrical component according to claim 8 formed as aresistor, a transistor, capacitor, inverter, an inductor or a diode orcombination therein and a plurality of the electrical components arefurther assembled to form an integrated circuit.
 16. The electricalcomponent according to claim 8 formed for the purpose of modulating theelectrical, thermal or quantum properties of the electrical component.17. The electrical component according to claim 8 formed for the purposeof modulating the electrical, thermal or quantum properties of a circuitto which the electrical component is connected.
 18. An electricalcomponent comprising: a) at least a first portion formed from andcomposed of diamond, the first portion primarily defined as aninsulator; b) at least a second portion formed from and composed ofdoped diamond, the second portion primarily defined as a conductor; c)wherein the first portion and the second portion are electricallyconnected, lie in a single plane and are integrally formed fortransmission of electricity across the electrical component.
 19. Theelectrical component according to claim 16 wherein the electricalcomponent is a resistor.
 20. The electrical component according to claim16 wherein a third portion is formed from and composed of a dopeddiamond, the third portion primarily defined as a semiconductor andwherein the first portion, the second portion and the third portion liein a single plane, are integrally formed and electrically connected fortransmission of electricity across the electrical component.
 21. Theelectrical component according to claim 17 wherein a fourth portion isformed from and composed of metal, the fourth portion primarily definedas a conductor, wherein the fourth portion is electrically connected andintegrally formed with the first, second and third portions, lies in thesame plane as the first, second and third portions for transmission ofelectricity across the electrical component.
 22. The electricalcomponent according to claim 16 formed as a resistor, a transistor,capacitor, an inductor or a diode or combination therein.
 23. Theelectrical component according to claim 16 formed as a resistor, atransistor, capacitor, inverter, an inductor or a diode or combinationtherein and a plurality of the electrical components are furtherassembled to form an integrated circuit.
 24. A confined pulsed laserdeposition method comprising: a) placing an ablative coating between atransparent confinement layer and a backing plane, wherein the ablativecoating is composed of graphite particles and a dopant material; b)directing a laser beam through the transparent confinement layer toirradiate and ablate the ablative coating at generally ambienttemperature and pressure; c) vaporizing the ablative coating into anoxidized plasma gas using the laser beam; d) confining the vaporizedablative coating using the confinement layer to generate laser inducedpressure between the confinement layer and the backing plane; and, e)synthesizing a metaphase from the ablative coating using the laserinduced pressure between the confinement layer and the backing plane.25. The confined pulsed laser deposition method of claim 23, wherein theablative coating includes metal.
 26. The confined pulsed laserdeposition method of claim 23, wherein the dopant material is selectedfrom the selected from the group comprising: boron, aluminium, nitrogen,gallium, indium, phosphorus, phosphine gas, arsenic, antimony, bismuth,lithium, germanium, silicon, xenon, gold, platinum, gallium arsenide,tellurium, sulphur, tin, zinc, chromium, gallium phosphide, magnesium,cadmium telluride, chlorine, sodium, cadmium sulfide, iodine, fluorine,each acting alone or in combination with any of the preceding elements,in any formulation, to activate the reaction sought to produce amaterial useful in production of a doped semiconductor or a dopedconductor suitable for the purpose of modulating the electrical, thermalor quantum properties of the material produced.